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 Power Transistors
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1177
7.20.3
Unit: mm
7.00.3 3.00.2 3.50.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 130 150 80 100 7 15 7 15 1.3 150 -55 to +150 Unit V
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1747 2SD1747A 2SD1747 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1
2
3
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
10.20.3
7.20.3
emitter voltage 2SD1747A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
3.00.2
1.0 max.
A A W C
4.60.4 0.750.1 1.10.1
2.5
0.5 max.
0.90.1 0 to 0.15
1
2
3
2.30.2
C
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1747 2SD1747A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = - 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz s s s min typ max 10 50 Unit A A V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
2.50.2
1.0
V
2.50.2
1.0
V
1
Power Transistors
PC -- Ta
20 10 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C
2SD1747, 2SD1747A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
Collector current IC (A)
8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0
15 (1)
3
1
(2) (1)
10
0.3
4
0.1
5
0.03
(2) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8
10
12
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100
VBE(sat) -- IC
100
VBE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Base to emitter saturation voltage VBE(sat) (V)
10
30 10 3 1 TC=100C 0.3 0.1 -25C 0.03 0.01 0.01 0.03 25C
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=20
IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C
3 (1) (2)
1
0.3
0.1
0.03
0.1
0.3
1
3
10
0.01 0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
10000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V f=10MHz TC=25C IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
1000 300
Transition frequency fT (MHz)
3000
3000 1000 300 100 30 10 3 1 0.1
TC=100C 25C 100 -25C 30 10 3 1 0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
2
Power Transistors
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C
2SD1747, 2SD1747A
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP t=10ms 10 IC 3 1 0.3 0.1 0.03 0.01 300ms 1ms
Switching time ton,tstg,tf (s)
10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4
tstg ton tf
Collector current IC (A)
5
6
7
8
1
3
10
30
100
2SD1747A
300
2SD1747
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR


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